2SC2078D Transistor — Specifications & Equivalents
2SC2078D Transistor Datasheet pdf, 2SC2078D Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 10 W |
| Maximum Collector-Base Voltage |Vcb| | 80 V |
| Maximum Collector-Emitter Voltage |Vce| | 75 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 3 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 100 MHz |
| Collector Capacitance (Cc) | 70 pF |
| Forward Current Transfer Ratio (hFE), MIN | 60 |
| Noise Figure, dB | - |
| Package | TO220 |
| 2SC2078Silicon NPN POWER TRANSISTORDESCRIPTIONB FSEATINGT PLANEC 4Designed primarily for SSB linear powerTSamplifier applicationsAQ1 2 3HFEATURESUKZ Specified 12.5V, 27MHz CharacteristicsL PO = 4W PEPV ft = 200 MHzSTYLE 1 | RGPIN 1. BASE2. COLLECTORJD3. EMITTERN4. COLLECTORDIMENSIONSUNIT A B C D F G H J K L N Q R |
| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION Collector-Emitter Voltage- | VCER= 75V(Min) ;RBE=150 Collector Current- :IC=3A APPLICATIONS 27MHz RF Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=15 |