2SC2078 bipolar transistor — Specifications & Equivalents

Manufacturer: Multi-source (JIS registered part number)

About the 2SC2078

The 2SC2078 is an NPN bipolar transistor with a collector–emitter voltage (VCEO) rating of 75 V, a continuous collector current (IC) of 3 A and a DC current gain (hFE) of minimum 25. It can dissipate up to 10 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220 package.

At a glance

  • Type: NPN bipolar transistor
  • Max collector–emitter voltage (VCEO): 75 V
  • Max collector current (IC): 3 A
  • DC current gain (hFE): minimum 25
  • Transition frequency (fT): 100 MHz
  • Power dissipation (PD): 10 W
  • Max junction temperature (TJ): 150 °C
  • Package: TO220
  • Manufacturer: Multi-source (JIS registered part number)

Typical applications

Judging from its ratings the 2SC2078 is generally applied in RF and high-speed switching stages and power output and driver stages.

A transition frequency (fT) of 100 MHz indicates the frequency range over which useful current gain remains available.

The quoted current gain of minimum 25 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.

Biasing and absolute maximum ratings

Absolute-maximum breakdown limits are VCEO 75 V, VCBO 80 V and VEBO 5 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.

Dissipation is capped at 10 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.

Choosing a replacement for the 2SC2078

A drop-in substitute for the 2SC2078 must be the same NPN type and offer a collector–emitter rating of at least 75 V, a collector current rating of at least 3 A, current gain in the same ballpark as minimum 25 and a transition frequency of at least 100 MHz for the same bandwidth.

Mechanically, check the replacement against the TO220 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Because 2SC2078 is a JIS-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 2SC2078?

The 2SC2078 is an NPN bipolar junction transistor (BJT). It is rated for 75 V collector-emitter and 3 A continuous collector current.

What is the maximum voltage of the 2SC2078?

Maximum collector-emitter voltage (Vceo) is 75 V, and collector-base (Vcbo) is 80 V.

How much current can the 2SC2078 handle?

Continuous collector current is rated at 3 A, with dissipation limited to 10 W.

What is the hFE of the 2SC2078?

DC current gain (hFE) is quoted as minimum 25. Size base drive from the minimum value so the transistor saturates fully across production spread.

What package does the 2SC2078 come in?

It is listed in TO220. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 2SC2078?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Material of TransistorSi
PolarityNPN
Maximum Collector Power Dissipation (Pc)10 W
Maximum Collector-Base Voltage |Vcb|80 V
Maximum Collector-Emitter Voltage |Vce|75 V
Maximum Emitter-Base Voltage |Veb|5 V
Maximum Collector Current |Ic max|3 A
Max. Operating Junction Temperature (Tj)150 °C
Transition Frequency (ft)100 MHz
Collector Capacitance (Cc)70 pF
Forward Current Transfer Ratio (hFE), MIN25
Noise Figure, dB-
PackageTO220
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION Collector-Emitter Voltage-VCER= 75V(Min) ;RBE=150 Collector Current- :IC=3A APPLICATIONS 27MHz RF Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=15
2SC2078Silicon NPN POWER TRANSISTORDESCRIPTIONB FSEATINGT PLANEC 4Designed primarily for SSB linear powerTSamplifier applicationsAQ1 2 3HFEATURESUKZ Specified 12.5V, 27MHz CharacteristicsL PO = 4W PEPV ft = 200 MHzSTYLE 1RGPIN 1. BASE2. COLLECTORJD3. EMITTERN4. COLLECTORDIMENSIONSUNIT A B C D F G H J K L N Q R

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