Question 1

What is 2N7335?

Accepted Answer

2N7335 Transistor Datasheet, 2N7335 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2N7335?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 1.4 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 0.75 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Package: MO-036AB, PD-90396HIRFG110JANTX2N7334JANTXV2N7334POWER MOSFETREF: MIL-PRF-19500/597THRU-HOLE (MO-036AB) 100V, QUAD N-CHANNELHEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFG110 0.7 1.0AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-stateres

Question 3

What are equivalent components to 2N7335?

Accepted Answer

Common equivalents include: 2N7275, 2N7278, 2N7281, 2N7291, 2N7293, 2N7295, 2N7297, 2N7334

2N7335 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	1.4 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	100 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	0.75 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Package	MO-036AB
PD-90396HIRFG110JANTX2N7334JANTXV2N7334POWER MOSFETREF	MIL-PRF-19500/597THRU-HOLE (MO-036AB) 100V, QUAD N-CHANNELHEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFG110 0.7 1.0AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-stateres