2N7002ET MOSFET — Specifications & Equivalents
Manufacturer: Multi-source (JEDEC registered part number)
About the 2N7002ET
The 2N7002ET is a MOSFET with a drain–source voltage (VDS) rating of 60 V and a continuous drain current (ID) of 0.115 A. It can dissipate up to 0.15 W and is rated to a junction temperature of 150 °C. It is supplied in the SOT523 package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 60 V
- Max continuous drain current (ID): 0.115 A
- Power dissipation (PD): 0.15 W
- Max junction temperature (TJ): 150 °C
- Package: SOT523
- Manufacturer: Multi-source (JEDEC registered part number)
Typical applications
With its 60 V drain–source rating the 2N7002ET sits in the mid-range class of switching MOSFETs, typically found in 24 V and 48 V industrial and battery systems, motor drives and H-bridges and load and hot-swap switching.
At 0.115 A it is aimed at small-signal and light-load switching rather than power conversion.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 4.2 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 2N7002ET
A drop-in substitute for the 2N7002ET should match its polarity and offer a drain–source rating of at least 60 V and a continuous drain current rating of at least 0.115 A.
Mechanically, check the replacement against the SOT523 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Because 2N7002ET is a JEDEC-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 2N7002ET?
The 2N7002ET is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 60 V drain-source and 0.115 A continuous drain current.
What is the maximum voltage of the 2N7002ET?
The 2N7002ET has a maximum drain-source voltage (Vds) of 60 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 2N7002ET handle?
It is rated for 0.115 A of continuous drain current, with power dissipation limited to 0.15 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the 2N7002ET come in?
It is listed in SOT523. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 2N7002ET?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 0.15 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 60 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 0.115 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 4.2 pF |
| Package | SOT523 |