EMB04N03H MOSFET — Specifications & Equivalents
About the EMB04N03H
The EMB04N03H is an N-channel MOSFET with a drain–source voltage (VDS) rating of 30 V, a continuous drain current (ID) of 75 A and an on-resistance (RDS(on)) of 0.004 Ω. It can dissipate up to 50 W and is rated to a junction temperature of 150 °C. It is supplied in the DFN5X6 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 30 V
- Max continuous drain current (ID): 75 A
- On-resistance (RDS(on)): 0.004 Ω
- Gate threshold (VGS(th)): 3 V
- Power dissipation (PD): 50 W
- Max junction temperature (TJ): 150 °C
- Package: DFN5X6
Typical applications
With its 30 V drain–source rating the EMB04N03H sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.
The 75 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
The low 0.004 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
With a gate threshold (VGS(th)) of 3 V this is not a logic-level device: driving the gate directly from a 3.3 V or 5 V microcontroller pin will leave it only partly on and cause it to overheat. Use a gate driver or level shifter, typically taking VGS to 10 V.
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Total gate charge (Qg) of 59 nC sets the drive current required: average gate current is roughly Qg × switching frequency, so faster switching needs a stronger driver.
Switching behaviour is characterised by a rise time of 12 ns and an output capacitance (Coss) of 548 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the EMB04N03H
A drop-in substitute for the EMB04N03H must be the same N-channel type and offer a drain–source rating of at least 30 V, a continuous drain current rating of at least 75 A, an on-resistance no higher than 0.004 Ω if efficiency and heat matter and a comparable gate threshold, so your existing gate drive still fully enhances the device.
Mechanically, check the replacement against the DFN5X6 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the EMB04N03H?
The EMB04N03H is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 30 V drain-source and 75 A continuous drain current.
What is the maximum voltage of the EMB04N03H?
The EMB04N03H has a maximum drain-source voltage (Vds) of 30 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the EMB04N03H handle?
It is rated for 75 A of continuous drain current, with power dissipation limited to 50 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the EMB04N03H?
On-resistance (Rds(on)) is 0.004 Ω. Multiply by the square of your load current to estimate conduction loss.
Is the EMB04N03H logic-level compatible?
No. The gate threshold is 3 V, so a 3.3 V or 5 V logic output cannot fully turn it on. Use a gate driver and take Vgs to around 10 V.
What package does the EMB04N03H come in?
It is listed in DFN5X6. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the EMB04N03H?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 30 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Gate Threshold Voltage (Vgsth) | 3 V |
| Drain Current (Id) | 75 A |
| Drain-Source On-Resistance (Rds) | 0.004 |
| Total Gate Charge (Qg) | 59 nC |
| Rise Time (tr) | 12 nS |
| Output Capacitance (Coss) | 548 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | DFN5X6 |
| Power Dissipation (Pd) | 50 W |
Equivalent & Replacement Parts
No verified equivalents are listed for EMB04N03H yet.