2N6798 Transistor — Specifications & Equivalents
2N6798 Transistor Datasheet, 2N6798 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 25 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 200 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 5.5 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 900 pF |
| Package | TO205AF |
Equivalent & Replacement Parts
- 2N6795-SM
- 2N6796
- 2N6796JANTX
- 2N6796JANTXV
- 2N6796SM
- 2N6797
- 2N6797LCC4
- 2N6797-SM
- 4N60
- 2N6798JANTX
- 2N6798JANTXV
- 2N6798SM
- 2N6799
- 2N6799LCC4
- 2N6799-SM
- 2N6800
- 2N6800JANTX