2N6661M1A Transistor — Specifications & Equivalents
2N6661M1A Transistor Datasheet, 2N6661M1A Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 8.33 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 90 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 1 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 40 pF |
| Package | TO-257AA |
Equivalent & Replacement Parts
- 2N6659-2
- 2N6659X
- 2N6660-2
- 2N6660C4A
- 2N6660CSM4
- 2N6661-2
- 2N6661CSM4
- 2N6661DCSM
- IRF1010E
- 2N6782U
- 2N6784U
- 2N6786U
- 2N6788L
- 2N6788LCC4
- 2N6788U
- 2N6790U
- 2N6792U