2N6661-2 Transistor — Specifications & Equivalents
2N6661-2 Transistor Datasheet, 2N6661-2 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 0.725 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 90 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 0.86 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 15 pF |
| Package | TO-39 |
Equivalent & Replacement Parts
- 2N60AF
- 2N60G
- 2N6568
- 2N6659-2
- 2N6659X
- 2N6660-2
- 2N6660C4A
- 2N6660CSM4
- IRFP260
- 2N6661CSM4
- 2N6661DCSM
- 2N6661M1A
- 2N6782U
- 2N6784U
- 2N6786U
- 2N6788L
- 2N6788LCC4