2N6661JANTXV Transistor — Specifications & Equivalents
2N6661JANTXV Transistor Datasheet, 2N6661JANTXV Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 6.25 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 90 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 2 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 50 pF |
| Package | TO39 |