2N6661JAN Transistor — Specifications & Equivalents

2N6661JAN Transistor Datasheet, 2N6661JAN Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage90 V
|Vgs|ⓘ - Maximum Gate-Source Voltage30 V
|Id| ⓘ - Maximum Drain Current2 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance50 pF
PackageTO39

Equivalent & Replacement Parts

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