2N3906CSM Transistor — Specifications & Equivalents
2N3906CSM Transistor Datasheet pdf, 2N3906CSM Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 0.31 W |
| Maximum Collector-Base Voltage |Vcb| | 40 V |
| Maximum Collector-Emitter Voltage |Vce| | 40 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 0.2 A |
| Max. Operating Junction Temperature (Tj) | 135 °C |
| Transition Frequency (ft) | 200 MHz |
| Collector Capacitance (Cc) | 5 pF |
| Forward Current Transfer Ratio (hFE), MIN | 100 |
| Noise Figure, dB | - |
| Package | LCC3 |
| SEMICONDUCTOR 2N3906CTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS | ICEX=-50nA(Max.), IBL=-50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=-30V, VEB=-3V. GC 3.70 MAXDExcellent DC Current Gain Linearity.D 0.45E 1.00Low Saturation Voltage F 1.27G 0.85: VCE(sat)=-0.4V( |