2302 Transistor — Specifications & Equivalents
2302 Transistor Datasheet, 2302 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 1 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 20 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 10 V |
| |Id| ⓘ - Maximum Drain Current | 2.9 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 120 pF |
| Package | SOT23 |
| SI2302DSN-channel enhancement mode field-effect transistorRev. 02 20 November 2001 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability | SI2302DS in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount packa |