2302 Transistor — Specifications & Equivalents

2302 Transistor Datasheet, 2302 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation1 W
|Vds|ⓘ - Maximum Drain-Source Voltage20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage10 V
|Id| ⓘ - Maximum Drain Current2.9 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance120 pF
PackageSOT23
SI2302DSN-channel enhancement mode field-effect transistorRev. 02 20 November 2001 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availabilitySI2302DS in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount packa

Equivalent & Replacement Parts

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