2302 MOSFET — Specifications & Equivalents
About the 2302
The 2302 is a MOSFET with a drain–source voltage (VDS) rating of 20 V and a continuous drain current (ID) of 2.9 A. It can dissipate up to 1 W and is rated to a junction temperature of 150 °C. It is supplied in the SOT23 package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 20 V
- Max continuous drain current (ID): 2.9 A
- Power dissipation (PD): 1 W
- Max junction temperature (TJ): 150 °C
- Package: SOT23
Typical applications
With its 20 V drain–source rating the 2302 sits in the very-low-voltage class of switching MOSFETs, typically found in battery protection and power-path switching, point-of-load converters and logic-level load switching in portable devices.
Gate drive and switching notes
Keep gate–source voltage within the ±10 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 120 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the 2302
A drop-in substitute for the 2302 should match its polarity and offer a drain–source rating of at least 20 V and a continuous drain current rating of at least 2.9 A.
Mechanically, check the replacement against the SOT23 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 2302?
The 2302 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 20 V drain-source and 2.9 A continuous drain current.
What is the maximum voltage of the 2302?
The 2302 has a maximum drain-source voltage (Vds) of 20 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 2302 handle?
It is rated for 2.9 A of continuous drain current, with power dissipation limited to 1 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the 2302 come in?
It is listed in SOT23. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 2302?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 1 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 20 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 10 V |
| |Id| ⓘ - Maximum Drain Current | 2.9 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 120 pF |
| Package | SOT23 |
| SI2302DSN-channel enhancement mode field-effect transistorRev. 02 20 November 2001 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability | SI2302DS in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount packa |