2026 Transistor — Specifications & Equivalents
2026 Transistor Datasheet, 2026 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 1.25 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 20 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 12 V |
| |Id| ⓘ - Maximum Drain Current | 3.2 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Package | SOT23 |
| Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2026P-Channel 1.25-W, 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Power MOSFETs | 1.8 V RatedVDS (V) rDS(on) ()ID (A)Pb-free- 0.056 at VGS = - 4.5 V 3.2Available0.069 at VGS = - 2.5 V- 20 - 2.8RoHS*COMPLIANT0.086 at VGS = - 1.8 V- 2.3TO-236(SOT-23)G 13 DS 2Top View2026*Marking Code:262TFABSOLUTE |