1N60G-TF2-T Transistor — Specifications & Equivalents
1N60G-TF2-T Transistor Datasheet, 1N60G-TF2-T Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 23 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 600 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 1.2 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 20 pF |
| Package | TO-220F |
Equivalent & Replacement Parts
- 19N10G-TQ2-R
- 19N10L-TQ2-T
- 19N10G-TQ2-T
- 19N10G-TMS-T
- 1N60G-AA3-R
- 1N60L-TA3-T
- 1N60G-TA3-T
- 1N60L-TF2-T
- 7N60
- 1N60L-TF3-T
- 1N60G-TF3-T
- 1N60G-TM3-T
- 1N60L-AA3-R
- 1N60L-AB3-R
- 1N60G-AB3-R
- 1N60L-TN3-R
- 1N60G-TN3-R