18N20 Transistor — Specifications & Equivalents
18N20 Transistor Datasheet, 18N20 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 110 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 200 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 18 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 81.2 pF |
| Package | TO251 TO252 TO220 |
| isc N-Channel MOSFET Transistor 18N20FEATURESDrain Current I = 18A@ T =25D CStatic drain-source on-resistance | RDS(on) 0.092Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch regulatorsSwitching converters, motor drivers, relay driversABSOLUTE MAXIMUM RAT |