10N60G-TF3-T Transistor — Specifications & Equivalents
10N60G-TF3-T Transistor Datasheet, 10N60G-TF3-T Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 50 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 600 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 10 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 166 pF |
| Package | TO-220F |
| CHENMKO ENTERPRISE CO.,LTDT10N60GPSURFACE MOUNT NPN Silicon Transistor VOLTAGE 60Volts CURRENT 10 AmpereAPPLICATION* General purpose applications.* Other switching applications.TO-220FEATURE* Package. (TO-220)* DC Current Gain Specified to Ic=10A( ).187 4.7( ).148 3.8( ).153 3.9* High Current Gain-Bandwidth Product | fT=2MHz (Min.) .413 10.5( ).108( ) |
Equivalent & Replacement Parts
- SUM70060E
- SUP10250E
- SUP90142E
- TN2404K
- TN2404KL
- 10N60L-TA3-T
- 10N60G-TA3-T
- 10N60L-TF3-T
- IRFB4115
- 10N60L-TF1-T
- 10N60G-TF1-T
- 10N60L-TF2-T
- 10N60G-TF2-T
- 10N60L-TF3T-T
- 10N60G-TF3T-T
- 10N60L-T2Q-T
- 10N60G-T2Q-T