Question 1

What are the advantages of GaN and SiC over Silicon?

Accepted Answer

GaN (Gallium Nitride) and SiC (Silicon Carbide) offer superior switching speeds, lower on-resistance, higher temperature operation, and reduced switching losses compared to traditional Silicon MOSFETs. This results in higher efficiency (95%+ vs 85-90%), smaller size, and better thermal performance in power converters.

Question 2

When should I use GaN vs SiC?

Accepted Answer

GaN excels in low-to-medium voltage (up to 650V) high-frequency applications like USB-PD chargers, data center power supplies, and consumer electronics. SiC is better for high-voltage (650V+) and high-power applications like EV inverters, solar inverters, and industrial motor drives due to its superior high-temperature performance.

Question 3

How does switching frequency affect efficiency?

Accepted Answer

Higher switching frequencies enable smaller magnetics and capacitors but increase switching losses. GaN and SiC maintain high efficiency even at 100kHz+ frequencies where Silicon efficiency drops significantly. The calculator models these frequency-dependent losses to show optimal operating points.

Question 4

What is thermal analysis and why does it matter?

Accepted Answer

Thermal analysis calculates junction temperature based on power dissipation and thermal resistance. High temperatures reduce efficiency, reliability, and component lifespan. GaN and SiC handle higher temperatures better than Silicon, allowing for smaller heatsinks or higher power density designs.

GaN/SiC Power Converter Efficiency Calculator

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