UF6N15 MOSFET — Specifications & Equivalents

About the UF6N15

The UF6N15 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 150 V, a continuous drain current (ID) of 6 A and an on-resistance (RDS(on)) of 1.95 Ω. It can dissipate up to 2 W and is rated to a junction temperature of 150 °C. It is supplied in the SOT-223 package.

At a glance

  • Type: N-channel MOSFET
  • Max drain–source voltage (VDS): 150 V
  • Max continuous drain current (ID): 6 A
  • On-resistance (RDS(on)): 1.95 Ω
  • Power dissipation (PD): 2 W
  • Max junction temperature (TJ): 150 °C
  • Package: SOT-223

Typical applications

With its 150 V drain–source rating the UF6N15 sits in the medium-voltage class of switching MOSFETs, typically found in 48 V and 96 V distribution systems, solar and telecom power stages, DC motor drives and intermediate-bus DC-DC converters.

On-resistance of 1.95 Ω is relatively high, so this part is better suited to low duty-cycle or low-current switching than to continuous high-current conduction.

Gate drive and switching notes

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by a rise time of 38 ns and an output capacitance (Coss) of 70 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the UF6N15

A drop-in substitute for the UF6N15 must be the same N-channel type and offer a drain–source rating of at least 150 V, a continuous drain current rating of at least 6 A and an on-resistance no higher than 1.95 Ω if efficiency and heat matter.

Mechanically, check the replacement against the SOT-223 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the UF6N15?

The UF6N15 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 150 V drain-source and 6 A continuous drain current.

What is the maximum voltage of the UF6N15?

The UF6N15 has a maximum drain-source voltage (Vds) of 150 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the UF6N15 handle?

It is rated for 6 A of continuous drain current, with power dissipation limited to 2 W. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the UF6N15?

On-resistance (Rds(on)) is 1.95 Ω. Multiply by the square of your load current to estimate conduction loss.

What package does the UF6N15 come in?

It is listed in SOT-223. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the UF6N15?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)150 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)6 A
Drain-Source On-Resistance (Rds)1.95
Rise Time (tr)38 nS
Output Capacitance (Coss)70 pF
Junction Temperature (Tj)150 °C
PackageSOT-223
Power Dissipation (Pd)2 W

Equivalent & Replacement Parts

No verified equivalents are listed for UF6N15 yet.

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