TIP35C Transistor — Specifications & Equivalents
TIP35C Transistor Datasheet pdf, TIP35C Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 90 W |
| Maximum Collector-Base Voltage |Vcb| | 140 V |
| Maximum Collector-Emitter Voltage |Vce| | 100 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 25 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 3 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 20 |
| Noise Figure, dB | - |
| Package | TOP3 |
| TIP35A, TIP35B, TIP35C(NPN); TIP36A, TIP36B,TIP36C (PNP)Complementary SiliconHigh-Power Transistorshttp | //onsemi.comDesigned for general-purpose power amplifier and switchingapplications.25 AMPEREFeaturesCOMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTSICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain |
Equivalent & Replacement Parts
- TIP34B
- TIP34C
- TIP34D
- TIP34E
- TIP34F
- TIP35
- TIP35A
- TIP35B
- 2SD1555
- TIP35D
- TIP35E
- TIP35F
- TIP36
- TIP36A
- TIP36B
- TIP36C
- TIP36D