TIP31C Transistor — Specifications & Equivalents
TIP31C Transistor Datasheet pdf, TIP31C Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 40 W |
| Maximum Collector-Base Voltage |Vcb| | 140 V |
| Maximum Collector-Emitter Voltage |Vce| | 100 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 3 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 3 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 20 |
| Noise Figure, dB | - |
| Package | TO220 |
| July 2008TIP31/TIP31A/TIP31B/TIP31CNPN Epitaxial Silicon TransistorFeatures Complementary to TIP32/TIP32A/TIP32B/TIP32C1. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage | TIP31 40 V : TIP31A 60 V : TIP31B 80 V : TIP31C 100 V VCEO Collector-Emitter Voltage : TIP31 40 V : TIP |
Equivalent & Replacement Parts
- TIP30B
- TIP30C
- TIP30D
- TIP30E
- TIP30F
- TIP31
- TIP31A
- TIP31B
- A1013
- TIP31D
- TIP31E
- TIP31F
- TIP32
- TIP32A
- TIP32B
- TIP32C
- TIP32D