STP6N120K3 MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by STMicroelectronics
About the STP6N120K3
The STP6N120K3 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 1200 V, a continuous drain current (ID) of 6 A and an on-resistance (RDS(on)) of 2.4 Ω. It can dissipate up to 150 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 1200 V
- Max continuous drain current (ID): 6 A
- On-resistance (RDS(on)): 2.4 Ω
- Power dissipation (PD): 150 W
- Max junction temperature (TJ): 150 °C
- Package: TO220
- Manufacturer: Commonly produced by STMicroelectronics
Typical applications
With its 1200 V drain–source rating the STP6N120K3 sits in the ultra-high-voltage class of switching MOSFETs, typically found in industrial ignition and igniter circuits, high-voltage pulse generators and electrostatic and CRT deflection stages. Ratings at this level demand careful creepage/clearance and insulation design on the PCB.
On-resistance of 2.4 Ω is relatively high, so this part is better suited to low duty-cycle or low-current switching than to continuous high-current conduction.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 12 ns and an output capacitance (Coss) of 90 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the STP6N120K3
A drop-in substitute for the STP6N120K3 must be the same N-channel type and offer a drain–source rating of at least 1200 V, a continuous drain current rating of at least 6 A and an on-resistance no higher than 2.4 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO220 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the STP6N120K3?
The STP6N120K3 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 1200 V drain-source and 6 A continuous drain current.
What is the maximum voltage of the STP6N120K3?
The STP6N120K3 has a maximum drain-source voltage (Vds) of 1200 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the STP6N120K3 handle?
It is rated for 6 A of continuous drain current, with power dissipation limited to 150 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the STP6N120K3?
On-resistance (Rds(on)) is 2.4 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the STP6N120K3 come in?
It is listed in TO220. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the STP6N120K3?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 1200 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 6 A |
| Drain-Source On-Resistance (Rds) | 2.4 |
| Rise Time (tr) | 12 nS |
| Output Capacitance (Coss) | 90 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO220 |
| Power Dissipation (Pd) | 150 W |
Equivalent & Replacement Parts
No verified equivalents are listed for STP6N120K3 yet.