STP62NS04Z MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by STMicroelectronics
About the STP62NS04Z
The STP62NS04Z is an N-channel MOSFET with a drain–source voltage (VDS) rating of 33 V, a continuous drain current (ID) of 62 A and an on-resistance (RDS(on)) of 0.015 Ω. It can dissipate up to 110 W and is rated to a junction temperature of 175 °C. It is supplied in the TO220 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 33 V
- Max continuous drain current (ID): 62 A
- On-resistance (RDS(on)): 0.015 Ω
- Power dissipation (PD): 110 W
- Max junction temperature (TJ): 175 °C
- Package: TO220
- Manufacturer: Commonly produced by STMicroelectronics
Typical applications
With its 33 V drain–source rating the STP62NS04Z sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.
The 62 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
The low 0.015 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
Switching behaviour is characterised by a rise time of 104 ns and an output capacitance (Coss) of 420 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the STP62NS04Z
A drop-in substitute for the STP62NS04Z must be the same N-channel type and offer a drain–source rating of at least 33 V, a continuous drain current rating of at least 62 A and an on-resistance no higher than 0.015 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO220 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the STP62NS04Z?
The STP62NS04Z is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 33 V drain-source and 62 A continuous drain current.
What is the maximum voltage of the STP62NS04Z?
The STP62NS04Z has a maximum drain-source voltage (Vds) of 33 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the STP62NS04Z handle?
It is rated for 62 A of continuous drain current, with power dissipation limited to 110 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the STP62NS04Z?
On-resistance (Rds(on)) is 0.015 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the STP62NS04Z come in?
It is listed in TO220. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the STP62NS04Z?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 33 V |
| Drain Current (Id) | 62 A |
| Drain-Source On-Resistance (Rds) | 0.015 |
| Rise Time (tr) | 104 nS |
| Output Capacitance (Coss) | 420 pF |
| Junction Temperature (Tj) | 175 °C |
| Package | TO220 |
| Power Dissipation (Pd) | 110 W |
Equivalent & Replacement Parts
No verified equivalents are listed for STP62NS04Z yet.