SPU01N60C3 Transistor — Specifications & Equivalents
SPU01N60C3 Transistor Datasheet, SPU01N60C3 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 11 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 600 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 0.8 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 40 pF |
| Package | TO251 |
Equivalent & Replacement Parts
- SPP21N50C3
- SPP24N60C3
- SPP24N60CFD
- SPP80P06PH
- SPS01N60C3
- SPS02N60C3
- SPS03N60C3
- SPS04N60C3
- IRFB31N20D
- SPU02N60C3
- SPU02N60S5
- SPU03N60C3
- SPU03N60S5
- SPU04N60C3
- SPU04N60S5
- SPU07N60C3
- SPU07N60S5