SPP20N65C3 MOSFET — Specifications & Equivalents
MOSFET N -Channel - SPP20N65C3
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 650 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 20.7 A |
| Drain-Source On-Resistance (Rds) | 0.19 |
| Rise Time (tr) | 5 nS |
| Output Capacitance (Coss) | 780 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO220 |
| Power Dissipation (Pd) | 208 W |
Equivalent & Replacement Parts
No verified equivalents are listed for SPP20N65C3 yet.