SPP08N80C3 Transistor — Specifications & Equivalents
SPP08N80C3 Transistor Datasheet, SPP08N80C3 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 104 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 800 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 8 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 46 pF |
| Package | TO220 |
Equivalent & Replacement Parts
- SPP04N80C3
- SPP06N60C3
- SPP06N80C3
- SPP07N60C3
- SPP07N60CFD
- SPP07N60S5
- SPP07N65C3
- SPP08N50C3
- TK10A60D
- SPP08P06PH
- SPP11N60C3
- SPP11N60CFD
- SPP11N60S5
- SPP11N65C3
- SPP11N80C3
- SPP12N50C3
- SPP15N60C3