SI2312 MOSFET — Specifications & Equivalents

MOSFET N -Channel - SI2312

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)20 V
Gate-Source Voltage (Vgs)8 V
Drain Current (Id)4.9 A
Drain-Source On-Resistance (Rds)0.031
Rise Time (tr)40 nS
Output Capacitance (Coss)300 pF
Junction Temperature (Tj)150 °C
PackageSOT23
Power Dissipation (Pd)0.75 W

Equivalent & Replacement Parts

No verified equivalents are listed for SI2312 yet.

Browse all electronic components