SI2301 MOSFET — Specifications & Equivalents

MOSFET P -Channel - SI2301

Key Specifications

TypeMOSFET
Channel TypeP -Channel
Drain-Source Voltage (Vds)20 V
Gate-Source Voltage (Vgs)8 V
Drain Current (Id)2.2 A
Drain-Source On-Resistance (Rds)0.13
Rise Time (tr)36 nS
Output Capacitance (Coss)223 pF
Junction Temperature (Tj)150 °C
PackageSOT23
Power Dissipation (Pd)1.25 W

Equivalent & Replacement Parts

No verified equivalents are listed for SI2301 yet.

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