RU6888R MOSFET — Specifications & Equivalents

MOSFET N -Channel - RU6888R

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)68 V
Gate-Source Voltage (Vgs)25 V
Gate Threshold Voltage (Vgsth)4 V
Drain Current (Id)88 A
Drain-Source On-Resistance (Rds)0.008
Total Gate Charge (Qg)65 nC
Rise Time (tr)15 nS
Output Capacitance (Coss)340 pF
Junction Temperature (Tj)175 °C
PackageTO220
Power Dissipation (Pd)120 W

Equivalent & Replacement Parts

No verified equivalents are listed for RU6888R yet.

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