RU6888R MOSFET — Specifications & Equivalents
MOSFET N -Channel - RU6888R
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 68 V |
| Gate-Source Voltage (Vgs) | 25 V |
| Gate Threshold Voltage (Vgsth) | 4 V |
| Drain Current (Id) | 88 A |
| Drain-Source On-Resistance (Rds) | 0.008 |
| Total Gate Charge (Qg) | 65 nC |
| Rise Time (tr) | 15 nS |
| Output Capacitance (Coss) | 340 pF |
| Junction Temperature (Tj) | 175 °C |
| Package | TO220 |
| Power Dissipation (Pd) | 120 W |
Equivalent & Replacement Parts
No verified equivalents are listed for RU6888R yet.