RJP63K2DPP-M0 transistor — Specifications & Equivalents
About the RJP63K2DPP-M0
The RJP63K2DPP-M0 is a transistor. It is rated to a junction temperature of 150 ℃. It is supplied in the TO220F package.
At a glance
- Type: transistor
- Max junction temperature (TJ): 150 ℃
- Package: TO220F
Choosing a replacement for the RJP63K2DPP-M0
A drop-in substitute for the RJP63K2DPP-M0 should match its polarity and meet or exceed every rating listed above.
Mechanically, check the replacement against the TO220F footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the RJP63K2DPP-M0?
The RJP63K2DPP-M0 is a transistor.
What package does the RJP63K2DPP-M0 come in?
It is listed in TO220F. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the RJP63K2DPP-M0?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pcⓘ - Maximum Power Dissipation | 25 W |
|---|---|
| |Vce|ⓘ - Maximum Collector-Emitter Voltage | 630 V |
| |Vge|ⓘ - Maximum Gate-Emitter Voltage | 30 V |
| |Ic|ⓘ - Maximum Collector Current | 35 A @25℃ |
| |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ | 1.9 V @25℃ |
| Tjⓘ - Maximum Junction Temperature | 150 ℃ |
| Coesⓘ - Output Capacitance, typ | 26 pF |
| Package | TO220F |
| Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage | VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa |
| Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage | VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Outline RENES |
Equivalent & Replacement Parts
- RJP60D0DPE
- RJP60D0DPP-M0
- RJP60F0DPE
- RJP60F0DPM
- RJP60F4DPM
- RJP60F5DPM
- RJP63F3DPP-M0
- RJP63K2DPK-M0
- IXRH40N120
- RJP6085DPN-00
- RJP6085DPK
- RJH60F0DPK
- RJH60F4DPK
- RJH60F6DPK
- RJH60F7ADPK
- RJH60F5DPK
- RJH60C9DPD