Question 1

What is RJP63K2DPP-M0?

Accepted Answer

RJP63K2DPP-M0 Transistor Datasheet, RJP63K2DPP-M0 Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of RJP63K2DPP-M0?

Accepted Answer

Key specifications include: Pcⓘ - Maximum Power Dissipation: 25 W, |Vce|ⓘ - Maximum Collector-Emitter Voltage: 630 V, |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V, |Ic|ⓘ - Maximum Collector Current: 35 A @25℃, |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃, Tjⓘ - Maximum Junction Temperature: 150 ℃, Coesⓘ - Output Capacitance, typ: 26 pF, Package: TO220F, Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa, Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Outline RENES

Question 3

What are equivalent components to RJP63K2DPP-M0?

Accepted Answer

Common equivalents include: RJP60D0DPE, RJP60D0DPP-M0, RJP60F0DPE, RJP60F0DPM, RJP60F4DPM, RJP60F5DPM, RJP63F3DPP-M0, RJP63K2DPK-M0

RJP63K2DPP-M0 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pcⓘ - Maximum Power Dissipation	25 W
\|Vce\|ⓘ - Maximum Collector-Emitter Voltage	630 V
\|Vge\|ⓘ - Maximum Gate-Emitter Voltage	30 V
\|Ic\|ⓘ - Maximum Collector Current	35 A @25℃
\|VCEsat\|ⓘ - Collector-Emitter saturation Voltage, typ	1.9 V @25℃
Tjⓘ - Maximum Junction Temperature	150 ℃
Coesⓘ - Output Capacitance, typ	26 pF
Package	TO220F
Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage	VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated pa
Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage	VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Outline RENES