Question 1

What is RJP30H2A?

Accepted Answer

RJP30H2A Transistor Datasheet, RJP30H2A Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of RJP30H2A?

Accepted Answer

Key specifications include: Pcⓘ - Maximum Power Dissipation: 60 W, |Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V, |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V, |Ic|ⓘ - Maximum Collector Current: 35 A @25℃, |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃, Tjⓘ - Maximum Junction Temperature: 150 ℃, Coesⓘ - Output Capacitance, typ: 60 pF, Package: TO263, Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A maxOutline, Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES, Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

Question 3

What are equivalent components to RJP30H2A?

Accepted Answer

Common equivalents include: IRGC100B120UB, IRGC100B60KB, IRGC100B60UB, IRGC15B120KB, IRGC15B120UB, IRGC16B120KB, IRGC16B60KB, GT50JR22

RJP30H2A Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pcⓘ - Maximum Power Dissipation	60 W
\|Vce\|ⓘ - Maximum Collector-Emitter Voltage	360 V
\|Vge\|ⓘ - Maximum Gate-Emitter Voltage	30 V
\|Ic\|ⓘ - Maximum Collector Current	35 A @25℃
\|VCEsat\|ⓘ - Collector-Emitter saturation Voltage, typ	1.9 V @25℃
Tjⓘ - Maximum Junction Temperature	150 ℃
Coesⓘ - Output Capacitance, typ	60 pF
Package	TO263
Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage	VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A maxOutline
Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage	VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES
Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching	tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES