RJP30H2A transistor — Specifications & Equivalents
About the RJP30H2A
The RJP30H2A is a transistor. It is rated to a junction temperature of 150 ℃. It is supplied in the TO263 package.
At a glance
- Type: transistor
- Max junction temperature (TJ): 150 ℃
- Package: TO263
Choosing a replacement for the RJP30H2A
A drop-in substitute for the RJP30H2A should match its polarity and meet or exceed every rating listed above.
Mechanically, check the replacement against the TO263 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the RJP30H2A?
The RJP30H2A is a transistor.
What package does the RJP30H2A come in?
It is listed in TO263. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the RJP30H2A?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pcⓘ - Maximum Power Dissipation | 60 W |
|---|---|
| |Vce|ⓘ - Maximum Collector-Emitter Voltage | 360 V |
| |Vge|ⓘ - Maximum Gate-Emitter Voltage | 30 V |
| |Ic|ⓘ - Maximum Collector Current | 35 A @25℃ |
| |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ | 1.9 V @25℃ |
| Tjⓘ - Maximum Junction Temperature | 150 ℃ |
| Coesⓘ - Output Capacitance, typ | 60 pF |
| Package | TO263 |
| Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage | VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A maxOutline |
| Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage | VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES |
| Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching | tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES |
Equivalent & Replacement Parts
- IRGC100B120UB
- IRGC100B60KB
- IRGC100B60UB
- IRGC15B120KB
- IRGC15B120UB
- IRGC16B120KB
- IRGC16B60KB
- GT50JR22
- IRGB20B60PD1
- FGA60N65SMD
- FGA6065ADF
- FGA6560WDF
- FGH30S130P
- GT40WR21
- FGM603
- FGT312
- FGT313