RFP4N100 MOSFET — Specifications & Equivalents
About the RFP4N100
The RFP4N100 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 1000 V, a continuous drain current (ID) of 4.3 A and an on-resistance (RDS(on)) of 3.5 Ω. It can dissipate up to 150 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220AB package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 1000 V
- Max continuous drain current (ID): 4.3 A
- On-resistance (RDS(on)): 3.5 Ω
- Power dissipation (PD): 150 W
- Max junction temperature (TJ): 150 °C
- Package: TO220AB
Typical applications
With its 1000 V drain–source rating the RFP4N100 sits in the ultra-high-voltage class of switching MOSFETs, typically found in industrial ignition and igniter circuits, high-voltage pulse generators and electrostatic and CRT deflection stages. Ratings at this level demand careful creepage/clearance and insulation design on the PCB.
On-resistance of 3.5 Ω is relatively high, so this part is better suited to low duty-cycle or low-current switching than to continuous high-current conduction.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 50 ns, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the RFP4N100
A drop-in substitute for the RFP4N100 must be the same N-channel type and offer a drain–source rating of at least 1000 V, a continuous drain current rating of at least 4.3 A and an on-resistance no higher than 3.5 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO220AB footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the RFP4N100?
The RFP4N100 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 1000 V drain-source and 4.3 A continuous drain current.
What is the maximum voltage of the RFP4N100?
The RFP4N100 has a maximum drain-source voltage (Vds) of 1000 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the RFP4N100 handle?
It is rated for 4.3 A of continuous drain current, with power dissipation limited to 150 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the RFP4N100?
On-resistance (Rds(on)) is 3.5 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the RFP4N100 come in?
It is listed in TO220AB. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the RFP4N100?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 1000 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 4.3 A |
| Drain-Source On-Resistance (Rds) | 3.5 |
| Rise Time (tr) | 50 |
| Junction Temperature (Tj) | 150 °C |
| Package | TO220AB |
| Power Dissipation (Pd) | 150 W |
Equivalent & Replacement Parts
No verified equivalents are listed for RFP4N100 yet.