RFP4N100 MOSFET — Specifications & Equivalents

MOSFET N -Channel - RFP4N100

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)1000 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)4.3 A
Drain-Source On-Resistance (Rds)3.5
Rise Time (tr)50
Junction Temperature (Tj)150 °C
PackageTO220AB
Power Dissipation (Pd)150 W

Equivalent & Replacement Parts

No verified equivalents are listed for RFP4N100 yet.

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