P1604ET MOSFET — Specifications & Equivalents
About the P1604ET
The P1604ET is a P-channel MOSFET with a drain–source voltage (VDS) rating of 40 V, a continuous drain current (ID) of 65 A and an on-resistance (RDS(on)) of 0.016 Ω. It can dissipate up to 104 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220 package.
At a glance
- Type: P-channel MOSFET
- Max drain–source voltage (VDS): 40 V
- Max continuous drain current (ID): 65 A
- On-resistance (RDS(on)): 0.016 Ω
- Power dissipation (PD): 104 W
- Max junction temperature (TJ): 150 °C
- Package: TO220
Typical applications
With its 40 V drain–source rating the P1604ET sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.
The 65 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
The low 0.016 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 43 ns and an output capacitance (Coss) of 334 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the P1604ET
A drop-in substitute for the P1604ET must be the same P-channel type and offer a drain–source rating of at least 40 V, a continuous drain current rating of at least 65 A and an on-resistance no higher than 0.016 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO220 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the P1604ET?
The P1604ET is a P-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 40 V drain-source and 65 A continuous drain current.
What is the maximum voltage of the P1604ET?
The P1604ET has a maximum drain-source voltage (Vds) of 40 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the P1604ET handle?
It is rated for 65 A of continuous drain current, with power dissipation limited to 104 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the P1604ET?
On-resistance (Rds(on)) is 0.016 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the P1604ET come in?
It is listed in TO220. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the P1604ET?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | P -Channel |
| Drain-Source Voltage (Vds) | 40 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 65 A |
| Drain-Source On-Resistance (Rds) | 0.016 |
| Rise Time (tr) | 43 nS |
| Output Capacitance (Coss) | 334 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO220 |
| Power Dissipation (Pd) | 104 W |
Equivalent & Replacement Parts
No verified equivalents are listed for P1604ET yet.