P1504EIS MOSFET — Specifications & Equivalents

About the P1504EIS

The P1504EIS is a P-channel MOSFET with a drain–source voltage (V_DS) rating of 40 V, a continuous drain current (I_D) of 38 A and an on-resistance (R_DS(on)) of 0.015 Ω. It can dissipate up to 34 W and is rated to a junction temperature of 150 °C. It is supplied in the TO251S package.

At a glance

• Type: P-channel MOSFET
• Max drain–source voltage (V_DS): 40 V
• Max continuous drain current (I_D): 38 A
• On-resistance (R_DS(on)): 0.015 Ω
• Gate threshold (V_GS(th)): 3 V
• Power dissipation (P_D): 34 W
• Max junction temperature (T_J): 150 °C
• Package: TO251S

Typical applications

With its 40 V drain–source rating the P1504EIS sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.

The low 0.015 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.

Gate drive and switching notes

With a gate threshold (V_GS(th)) of 3 V this is not a logic-level device: driving the gate directly from a 3.3 V or 5 V microcontroller pin will leave it only partly on and cause it to overheat. Use a gate driver or level shifter, typically taking V_GS to 10 V.

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Total gate charge (Q_g) of 55 nC sets the drive current required: average gate current is roughly Q_g × switching frequency, so faster switching needs a stronger driver.

Switching behaviour is characterised by a rise time of 31 ns and an output capacitance (C_oss) of 273 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the P1504EIS

A drop-in substitute for the P1504EIS must be the same P-channel type and offer a drain–source rating of at least 40 V, a continuous drain current rating of at least 38 A, an on-resistance no higher than 0.015 Ω if efficiency and heat matter and a comparable gate threshold, so your existing gate drive still fully enhances the device.

Mechanically, check the replacement against the TO251S footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the P1504EIS?

The P1504EIS is a P-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 40 V drain-source and 38 A continuous drain current.

What is the maximum voltage of the P1504EIS?

The P1504EIS has a maximum drain-source voltage (Vds) of 40 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the P1504EIS handle?

It is rated for 38 A of continuous drain current, with power dissipation limited to 34 W. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the P1504EIS?

On-resistance (Rds(on)) is 0.015 Ω. Multiply by the square of your load current to estimate conduction loss.

Is the P1504EIS logic-level compatible?

No. The gate threshold is 3 V, so a 3.3 V or 5 V logic output cannot fully turn it on. Use a gate driver and take Vgs to around 10 V.

What package does the P1504EIS come in?

It is listed in TO251S. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the P1504EIS?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.