MJE340 Transistor — Specifications & Equivalents
MJE340 Transistor Datasheet pdf, MJE340 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 20 W |
| Maximum Collector-Base Voltage |Vcb| | 300 V |
| Maximum Collector-Emitter Voltage |Vce| | 300 V |
| Maximum Emitter-Base Voltage |Veb| | 3 V |
| Maximum Collector Current |Ic max| | 0.5 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 10 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 30 |
| Noise Figure, dB | - |
| Package | TO126 |
| isc Silicon NPN Power Transistor MJE340DESCRIPTIONCollectorEmitter Sustaining Voltage- | V = 300 V(Min)CEO(SUS)DC Current Gain-: h = 100(Min) @ I = 50mAFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 50mACE(sat) CComplement to the PNP MJE350Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned |
Equivalent & Replacement Parts
- MJE3311
- MJE3312
- MJE3370
- MJE3371
- MJE33A
- MJE33B
- MJE33C
- MJE34
- TIP41C
- MJE340K
- MJE341
- MJE341K
- MJE3439
- MJE344
- MJE3440
- MJE344K
- MJE345