MBQ60T65PES Transistor — Specifications & Equivalents
MBQ60T65PES Transistor Datasheet, MBQ60T65PES Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pcⓘ - Maximum Power Dissipation | 428 W |
|---|---|
| |Vce|ⓘ - Maximum Collector-Emitter Voltage | 650 V |
| |Vge|ⓘ - Maximum Gate-Emitter Voltage | 20 V |
| |Ic|ⓘ - Maximum Collector Current | 100 A @25℃ |
| |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ | 1.85 V @25℃ |
| Tjⓘ - Maximum Junction Temperature | 175 ℃ |
| Coesⓘ - Output Capacitance, typ | 270 pF |
| Package | TO247 |
Equivalent & Replacement Parts
- FGT612
- 2PG001
- IKW30N65WR5
- MGD633
- GT20D201
- MBQ40T120FES
- GT40RR21
- MBQ50T65FESC
- YGW60N65F1A2
- JNG25N120HS
- SSG60N60N
- PDMB100E6
- SL40N60FL
- MBQ50T65FDSC
- STGW38IH120D
- FGH75T65UPD
- STGB7NC60KD