JMSH1509PE MOSFET — Specifications & Equivalents
About the JMSH1509PE
The JMSH1509PE is an N-channel MOSFET with a drain–source voltage (VDS) rating of 150 V, a continuous drain current (ID) of 84 A and an on-resistance (RDS(on)) of 0.0105 Ω. It can dissipate up to 170 W and is rated to a junction temperature of 150 °C. It is supplied in the TO263 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 150 V
- Max continuous drain current (ID): 84 A
- On-resistance (RDS(on)): 0.0105 Ω
- Power dissipation (PD): 170 W
- Max junction temperature (TJ): 150 °C
- Package: TO263
Typical applications
With its 150 V drain–source rating the JMSH1509PE sits in the medium-voltage class of switching MOSFETs, typically found in 48 V and 96 V distribution systems, solar and telecom power stages, DC motor drives and intermediate-bus DC-DC converters.
The 84 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
The low 0.0105 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 29 ns and an output capacitance (Coss) of 323 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the JMSH1509PE
A drop-in substitute for the JMSH1509PE must be the same N-channel type and offer a drain–source rating of at least 150 V, a continuous drain current rating of at least 84 A and an on-resistance no higher than 0.0105 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO263 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the JMSH1509PE?
The JMSH1509PE is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 150 V drain-source and 84 A continuous drain current.
What is the maximum voltage of the JMSH1509PE?
The JMSH1509PE has a maximum drain-source voltage (Vds) of 150 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the JMSH1509PE handle?
It is rated for 84 A of continuous drain current, with power dissipation limited to 170 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the JMSH1509PE?
On-resistance (Rds(on)) is 0.0105 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the JMSH1509PE come in?
It is listed in TO263. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the JMSH1509PE?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 150 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 84 A |
| Drain-Source On-Resistance (Rds) | 0.0105 |
| Rise Time (tr) | 29 nS |
| Output Capacitance (Coss) | 323 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO263 |
| Power Dissipation (Pd) | 170 W |
Equivalent & Replacement Parts
No verified equivalents are listed for JMSH1509PE yet.