JMH65R190AFFD MOSFET — Specifications & Equivalents

About the JMH65R190AFFD

The JMH65R190AFFD is an N-channel MOSFET with a drain–source voltage (V_DS) rating of 650 V, a continuous drain current (I_D) of 20 A and an on-resistance (R_DS(on)) of 0.19 Ω. It can dissipate up to 36 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220F package.

At a glance

• Type: N-channel MOSFET
• Max drain–source voltage (V_DS): 650 V
• Max continuous drain current (I_D): 20 A
• On-resistance (R_DS(on)): 0.19 Ω
• Gate threshold (V_GS(th)): 4.5 V
• Power dissipation (P_D): 36 W
• Max junction temperature (T_J): 150 °C
• Package: TO220F

Typical applications

With its 650 V drain–source rating the JMH65R190AFFD sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.

Gate drive and switching notes

With a gate threshold (V_GS(th)) of 4.5 V this is not a logic-level device: driving the gate directly from a 3.3 V or 5 V microcontroller pin will leave it only partly on and cause it to overheat. Use a gate driver or level shifter, typically taking V_GS to 10 V.

Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Total gate charge (Q_g) of 38 nC sets the drive current required: average gate current is roughly Q_g × switching frequency, so faster switching needs a stronger driver.

Switching behaviour is characterised by a rise time of 22 ns and an output capacitance (C_oss) of 61 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the JMH65R190AFFD

A drop-in substitute for the JMH65R190AFFD must be the same N-channel type and offer a drain–source rating of at least 650 V, a continuous drain current rating of at least 20 A, an on-resistance no higher than 0.19 Ω if efficiency and heat matter and a comparable gate threshold, so your existing gate drive still fully enhances the device.

Mechanically, check the replacement against the TO220F footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the JMH65R190AFFD?

The JMH65R190AFFD is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 650 V drain-source and 20 A continuous drain current.

What is the maximum voltage of the JMH65R190AFFD?

The JMH65R190AFFD has a maximum drain-source voltage (Vds) of 650 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the JMH65R190AFFD handle?

It is rated for 20 A of continuous drain current, with power dissipation limited to 36 W. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the JMH65R190AFFD?

On-resistance (Rds(on)) is 0.19 Ω. Multiply by the square of your load current to estimate conduction loss.

Is the JMH65R190AFFD logic-level compatible?

No. The gate threshold is 4.5 V, so a 3.3 V or 5 V logic output cannot fully turn it on. Use a gate driver and take Vgs to around 10 V.

What package does the JMH65R190AFFD come in?

It is listed in TO220F. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the JMH65R190AFFD?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.