JMH65R190AF MOSFET — Specifications & Equivalents
MOSFET N -Channel - JMH65R190AF
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 650 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Gate Threshold Voltage (Vgsth) | 4.5 V |
| Drain Current (Id) | 20 A |
| Drain-Source On-Resistance (Rds) | 0.19 |
| Total Gate Charge (Qg) | 38 nC |
| Rise Time (tr) | 22 nS |
| Output Capacitance (Coss) | 61 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO220F |
| Power Dissipation (Pd) | 36 W |
Equivalent & Replacement Parts
No verified equivalents are listed for JMH65R190AF yet.