JMH65R190AE MOSFET — Specifications & Equivalents
About the JMH65R190AE
The JMH65R190AE is an N-channel MOSFET with a drain–source voltage (VDS) rating of 650 V, a continuous drain current (ID) of 20 A and an on-resistance (RDS(on)) of 0.19 Ω. It can dissipate up to 189 W and is rated to a junction temperature of 150 °C. It is supplied in the TO263 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 650 V
- Max continuous drain current (ID): 20 A
- On-resistance (RDS(on)): 0.19 Ω
- Power dissipation (PD): 189 W
- Max junction temperature (TJ): 150 °C
- Package: TO263
Typical applications
With its 650 V drain–source rating the JMH65R190AE sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 22 ns and an output capacitance (Coss) of 61 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the JMH65R190AE
A drop-in substitute for the JMH65R190AE must be the same N-channel type and offer a drain–source rating of at least 650 V, a continuous drain current rating of at least 20 A and an on-resistance no higher than 0.19 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO263 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the JMH65R190AE?
The JMH65R190AE is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 650 V drain-source and 20 A continuous drain current.
What is the maximum voltage of the JMH65R190AE?
The JMH65R190AE has a maximum drain-source voltage (Vds) of 650 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the JMH65R190AE handle?
It is rated for 20 A of continuous drain current, with power dissipation limited to 189 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the JMH65R190AE?
On-resistance (Rds(on)) is 0.19 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the JMH65R190AE come in?
It is listed in TO263. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the JMH65R190AE?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 650 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 20 A |
| Drain-Source On-Resistance (Rds) | 0.19 |
| Rise Time (tr) | 22 nS |
| Output Capacitance (Coss) | 61 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO263 |
| Power Dissipation (Pd) | 189 W |
Equivalent & Replacement Parts
No verified equivalents are listed for JMH65R190AE yet.