IRFP452 MOSFET — Specifications & Equivalents

About the IRFP452

The IRFP452 is an N-channel MOSFET with a drain–source voltage (V_DS) rating of 500 V, a continuous drain current (I_D) of 12 A and an on-resistance (R_DS(on)) of 0.5 Ω. It can dissipate up to 180 W and is rated to a junction temperature of 150 °C. It is supplied in the TO218 package.

At a glance

• Type: N-channel MOSFET
• Max drain–source voltage (V_DS): 500 V
• Max continuous drain current (I_D): 12 A
• On-resistance (R_DS(on)): 0.5 Ω
• Gate threshold (V_GS(th)): 4 V
• Power dissipation (P_D): 180 W
• Max junction temperature (T_J): 150 °C
• Package: TO218
• Manufacturer: Commonly produced by International Rectifier (now Infineon)

Typical applications

With its 500 V drain–source rating the IRFP452 sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.

Gate drive and switching notes

With a gate threshold (V_GS(th)) of 4 V this is not a logic-level device: driving the gate directly from a 3.3 V or 5 V microcontroller pin will leave it only partly on and cause it to overheat. Use a gate driver or level shifter, typically taking V_GS to 10 V.

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Total gate charge (Q_g) of 120 nC sets the drive current required: average gate current is roughly Q_g × switching frequency, so faster switching needs a stronger driver.

Switching behaviour is characterised by a rise time of 50 ns and an output capacitance (C_oss) of 600 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the IRFP452

A drop-in substitute for the IRFP452 must be the same N-channel type and offer a drain–source rating of at least 500 V, a continuous drain current rating of at least 12 A, an on-resistance no higher than 0.5 Ω if efficiency and heat matter and a comparable gate threshold, so your existing gate drive still fully enhances the device.

Mechanically, check the replacement against the TO218 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the IRFP452?

The IRFP452 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 500 V drain-source and 12 A continuous drain current.

What is the maximum voltage of the IRFP452?

The IRFP452 has a maximum drain-source voltage (Vds) of 500 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the IRFP452 handle?

It is rated for 12 A of continuous drain current, with power dissipation limited to 180 W. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the IRFP452?

On-resistance (Rds(on)) is 0.5 Ω. Multiply by the square of your load current to estimate conduction loss.

Is the IRFP452 logic-level compatible?

No. The gate threshold is 4 V, so a 3.3 V or 5 V logic output cannot fully turn it on. Use a gate driver and take Vgs to around 10 V.

What package does the IRFP452 come in?

It is listed in TO218. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the IRFP452?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.