IRFP4332 MOSFET — Specifications & Equivalents

Manufacturer: Commonly produced by International Rectifier (now Infineon)

About the IRFP4332

The IRFP4332 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 250 V, a continuous drain current (ID) of 57 A and an on-resistance (RDS(on)) of 0.033 Ω. It can dissipate up to 360 W and is rated to a junction temperature of 175 °C. It is supplied in the TO247AC package.

At a glance

  • Type: N-channel MOSFET
  • Max drain–source voltage (VDS): 250 V
  • Max continuous drain current (ID): 57 A
  • On-resistance (RDS(on)): 0.033 Ω
  • Power dissipation (PD): 360 W
  • Max junction temperature (TJ): 175 °C
  • Package: TO247AC
  • Manufacturer: Commonly produced by International Rectifier (now Infineon)

Typical applications

With its 250 V drain–source rating the IRFP4332 sits in the medium-high-voltage class of switching MOSFETs, typically found in telecom and industrial DC rails, boost and flyback converters, LED and backlight drivers and power-factor-correction stages. Common where the bus sits well above 100 V but below rectified mains.

The 57 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.

The low 0.033 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.

Gate drive and switching notes

Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 530 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the IRFP4332

A drop-in substitute for the IRFP4332 must be the same N-channel type and offer a drain–source rating of at least 250 V, a continuous drain current rating of at least 57 A and an on-resistance no higher than 0.033 Ω if efficiency and heat matter.

Mechanically, check the replacement against the TO247AC footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the IRFP4332?

The IRFP4332 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 250 V drain-source and 57 A continuous drain current.

What is the maximum voltage of the IRFP4332?

The IRFP4332 has a maximum drain-source voltage (Vds) of 250 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the IRFP4332 handle?

It is rated for 57 A of continuous drain current, with power dissipation limited to 360 W. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the IRFP4332?

On-resistance (Rds(on)) is 0.033 Ω. Multiply by the square of your load current to estimate conduction loss.

What package does the IRFP4332 come in?

It is listed in TO247AC. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the IRFP4332?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)250 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)57 A
Drain-Source On-Resistance (Rds)0.033
Output Capacitance (Coss)530 pF
Junction Temperature (Tj)175 °C
PackageTO247AC
Power Dissipation (Pd)360 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRFP4332 yet.

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