IRFP250N MOSFET — Specifications & Equivalents

About the IRFP250N

The IRFP250N is an N-channel MOSFET with a drain–source voltage (V_DS) rating of 200 V, a continuous drain current (I_D) of 30 A and an on-resistance (R_DS(on)) of 0.075 Ω. It can dissipate up to 214 W and is rated to a junction temperature of 175 °C. It is supplied in the TO247AC package.

At a glance

• Type: N-channel MOSFET
• Max drain–source voltage (V_DS): 200 V
• Max continuous drain current (I_D): 30 A
• On-resistance (R_DS(on)): 0.075 Ω
• Gate threshold (V_GS(th)): 4 V
• Power dissipation (P_D): 214 W
• Max junction temperature (T_J): 175 °C
• Package: TO247AC
• Manufacturer: Commonly produced by International Rectifier (now Infineon)

Typical applications

With its 200 V drain–source rating the IRFP250N sits in the medium-high-voltage class of switching MOSFETs, typically found in telecom and industrial DC rails, boost and flyback converters, LED and backlight drivers and power-factor-correction stages. Common where the bus sits well above 100 V but below rectified mains.

Gate drive and switching notes

With a gate threshold (V_GS(th)) of 4 V this is not a logic-level device: driving the gate directly from a 3.3 V or 5 V microcontroller pin will leave it only partly on and cause it to overheat. Use a gate driver or level shifter, typically taking V_GS to 10 V.

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Total gate charge (Q_g) of 123 nC sets the drive current required: average gate current is roughly Q_g × switching frequency, so faster switching needs a stronger driver.

Switching behaviour is characterised by a rise time of 43 ns and an output capacitance (C_oss) of 315 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the IRFP250N

A drop-in substitute for the IRFP250N must be the same N-channel type and offer a drain–source rating of at least 200 V, a continuous drain current rating of at least 30 A, an on-resistance no higher than 0.075 Ω if efficiency and heat matter and a comparable gate threshold, so your existing gate drive still fully enhances the device.

Mechanically, check the replacement against the TO247AC footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the IRFP250N?

The IRFP250N is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 200 V drain-source and 30 A continuous drain current.

What is the maximum voltage of the IRFP250N?

The IRFP250N has a maximum drain-source voltage (Vds) of 200 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the IRFP250N handle?

It is rated for 30 A of continuous drain current, with power dissipation limited to 214 W. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the IRFP250N?

On-resistance (Rds(on)) is 0.075 Ω. Multiply by the square of your load current to estimate conduction loss.

Is the IRFP250N logic-level compatible?

No. The gate threshold is 4 V, so a 3.3 V or 5 V logic output cannot fully turn it on. Use a gate driver and take Vgs to around 10 V.

What package does the IRFP250N come in?

It is listed in TO247AC. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the IRFP250N?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.