IRFP250A MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by International Rectifier (now Infineon)
About the IRFP250A
The IRFP250A is an N-channel MOSFET with a drain–source voltage (VDS) rating of 200 V, a continuous drain current (ID) of 32 A and an on-resistance (RDS(on)) of 0.085 Ω. It can dissipate up to 204 W and is rated to a junction temperature of 150 °C. It is supplied in the TO3P package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 200 V
- Max continuous drain current (ID): 32 A
- On-resistance (RDS(on)): 0.085 Ω
- Power dissipation (PD): 204 W
- Max junction temperature (TJ): 150 °C
- Package: TO3P
- Manufacturer: Commonly produced by International Rectifier (now Infineon)
Typical applications
With its 200 V drain–source rating the IRFP250A sits in the medium-high-voltage class of switching MOSFETs, typically found in telecom and industrial DC rails, boost and flyback converters, LED and backlight drivers and power-factor-correction stages. Common where the bus sits well above 100 V but below rectified mains.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 20 ns and an output capacitance (Coss) of 410 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the IRFP250A
A drop-in substitute for the IRFP250A must be the same N-channel type and offer a drain–source rating of at least 200 V, a continuous drain current rating of at least 32 A and an on-resistance no higher than 0.085 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO3P footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the IRFP250A?
The IRFP250A is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 200 V drain-source and 32 A continuous drain current.
What is the maximum voltage of the IRFP250A?
The IRFP250A has a maximum drain-source voltage (Vds) of 200 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the IRFP250A handle?
It is rated for 32 A of continuous drain current, with power dissipation limited to 204 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the IRFP250A?
On-resistance (Rds(on)) is 0.085 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the IRFP250A come in?
It is listed in TO3P. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the IRFP250A?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 200 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 32 A |
| Drain-Source On-Resistance (Rds) | 0.085 |
| Rise Time (tr) | 20 nS |
| Output Capacitance (Coss) | 410 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO3P |
| Power Dissipation (Pd) | 204 W |
Equivalent & Replacement Parts
No verified equivalents are listed for IRFP250A yet.