IRFN9130SMD MOSFET — Specifications & Equivalents
MOSFET P -Channel - IRFN9130SMD
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | P -Channel |
| Drain-Source Voltage (Vds) | 100 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 9.3 A |
| Drain-Source On-Resistance (Rds) | 0.31 |
| Rise Time (tr) | 140 |
| Output Capacitance (Coss) | 350 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | SMD1 |
| Power Dissipation (Pd) | 45 W |
Equivalent & Replacement Parts
No verified equivalents are listed for IRFN9130SMD yet.