IRFN9130SMD MOSFET — Specifications & Equivalents

MOSFET P -Channel - IRFN9130SMD

Key Specifications

TypeMOSFET
Channel TypeP -Channel
Drain-Source Voltage (Vds)100 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)9.3 A
Drain-Source On-Resistance (Rds)0.31
Rise Time (tr)140
Output Capacitance (Coss)350 pF
Junction Temperature (Tj)150 °C
PackageSMD1
Power Dissipation (Pd)45 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRFN9130SMD yet.

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