IRFB4229 MOSFET — Specifications & Equivalents

MOSFET N -Channel - IRFB4229

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)250 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)46 A
Drain-Source On-Resistance (Rds)0.046
Rise Time (tr)31 nS
Output Capacitance (Coss)390 pF
Junction Temperature (Tj)175 °C
PackageTO220AB
Power Dissipation (Pd)330 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRFB4229 yet.

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