IRFB4110Q MOSFET — Specifications & Equivalents

MOSFET N -Channel - IRFB4110Q

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)100 V
Gate-Source Voltage (Vgs)20 V
Gate Threshold Voltage (Vgsth)4 V
Drain Current (Id)180 A
Drain-Source On-Resistance (Rds)0.0045
Total Gate Charge (Qg)150 nC
Rise Time (tr)67 nS
Output Capacitance (Coss)670 pF
Junction Temperature (Tj)175 °C
PackageTO220AB
Power Dissipation (Pd)370 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRFB4110Q yet.

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