IRFB33N15D MOSFET — Specifications & Equivalents

About the IRFB33N15D

The IRFB33N15D is an N-channel MOSFET with a drain–source voltage (V_DS) rating of 150 V, a continuous drain current (I_D) of 33 A and an on-resistance (R_DS(on)) of 0.056 Ω. It can dissipate up to 170 W and is rated to a junction temperature of 175 °C. It is supplied in the TO220AB package.

At a glance

• Type: N-channel MOSFET
• Max drain–source voltage (V_DS): 150 V
• Max continuous drain current (I_D): 33 A
• On-resistance (R_DS(on)): 0.056 Ω
• Gate threshold (V_GS(th)): 5.5 V
• Power dissipation (P_D): 170 W
• Max junction temperature (T_J): 175 °C
• Package: TO220AB
• Manufacturer: Commonly produced by International Rectifier (now Infineon)

Typical applications

With its 150 V drain–source rating the IRFB33N15D sits in the medium-voltage class of switching MOSFETs, typically found in 48 V and 96 V distribution systems, solar and telecom power stages, DC motor drives and intermediate-bus DC-DC converters.

Gate drive and switching notes

With a gate threshold (V_GS(th)) of 5.5 V this is not a logic-level device: driving the gate directly from a 3.3 V or 5 V microcontroller pin will leave it only partly on and cause it to overheat. Use a gate driver or level shifter, typically taking V_GS to 10 V.

Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Total gate charge (Q_g) of 60 nC sets the drive current required: average gate current is roughly Q_g × switching frequency, so faster switching needs a stronger driver.

Switching behaviour is characterised by a rise time of 38 ns and an output capacitance (C_oss) of 400 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the IRFB33N15D

A drop-in substitute for the IRFB33N15D must be the same N-channel type and offer a drain–source rating of at least 150 V, a continuous drain current rating of at least 33 A, an on-resistance no higher than 0.056 Ω if efficiency and heat matter and a comparable gate threshold, so your existing gate drive still fully enhances the device.

Mechanically, check the replacement against the TO220AB footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the IRFB33N15D?

The IRFB33N15D is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 150 V drain-source and 33 A continuous drain current.

What is the maximum voltage of the IRFB33N15D?

The IRFB33N15D has a maximum drain-source voltage (Vds) of 150 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the IRFB33N15D handle?

It is rated for 33 A of continuous drain current, with power dissipation limited to 170 W. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the IRFB33N15D?

On-resistance (Rds(on)) is 0.056 Ω. Multiply by the square of your load current to estimate conduction loss.

Is the IRFB33N15D logic-level compatible?

No. The gate threshold is 5.5 V, so a 3.3 V or 5 V logic output cannot fully turn it on. Use a gate driver and take Vgs to around 10 V.

What package does the IRFB33N15D come in?

It is listed in TO220AB. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the IRFB33N15D?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.