IRFB3306G MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by International Rectifier (now Infineon)
About the IRFB3306G
The IRFB3306G is an N-channel MOSFET with a drain–source voltage (VDS) rating of 60 V, a continuous drain current (ID) of 160 A and an on-resistance (RDS(on)) of 0.0042 Ω. It can dissipate up to 230 W and is rated to a junction temperature of 175 °C. It is supplied in the TO220AB package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 60 V
- Max continuous drain current (ID): 160 A
- On-resistance (RDS(on)): 0.0042 Ω
- Power dissipation (PD): 230 W
- Max junction temperature (TJ): 175 °C
- Package: TO220AB
- Manufacturer: Commonly produced by International Rectifier (now Infineon)
Typical applications
With its 60 V drain–source rating the IRFB3306G sits in the mid-range class of switching MOSFETs, typically found in 24 V and 48 V industrial and battery systems, motor drives and H-bridges and load and hot-swap switching.
The 160 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
The low 0.0042 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 76 ns and an output capacitance (Coss) of 500 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the IRFB3306G
A drop-in substitute for the IRFB3306G must be the same N-channel type and offer a drain–source rating of at least 60 V, a continuous drain current rating of at least 160 A and an on-resistance no higher than 0.0042 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO220AB footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the IRFB3306G?
The IRFB3306G is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 60 V drain-source and 160 A continuous drain current.
What is the maximum voltage of the IRFB3306G?
The IRFB3306G has a maximum drain-source voltage (Vds) of 60 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the IRFB3306G handle?
It is rated for 160 A of continuous drain current, with power dissipation limited to 230 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the IRFB3306G?
On-resistance (Rds(on)) is 0.0042 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the IRFB3306G come in?
It is listed in TO220AB. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the IRFB3306G?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 60 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 160 A |
| Drain-Source On-Resistance (Rds) | 0.0042 |
| Rise Time (tr) | 76 nS |
| Output Capacitance (Coss) | 500 pF |
| Junction Temperature (Tj) | 175 °C |
| Package | TO220AB |
| Power Dissipation (Pd) | 230 W |
Equivalent & Replacement Parts
No verified equivalents are listed for IRFB3306G yet.