IRFB260N MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by International Rectifier (now Infineon)
About the IRFB260N
The IRFB260N is an N-channel MOSFET with a drain–source voltage (VDS) rating of 200 V, a continuous drain current (ID) of 56 A and an on-resistance (RDS(on)) of 0.04 Ω. It can dissipate up to 380 W and is rated to a junction temperature of 175 °C. It is supplied in the TO220AB package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 200 V
- Max continuous drain current (ID): 56 A
- On-resistance (RDS(on)): 0.04 Ω
- Power dissipation (PD): 380 W
- Max junction temperature (TJ): 175 °C
- Package: TO220AB
- Manufacturer: Commonly produced by International Rectifier (now Infineon)
Typical applications
With its 200 V drain–source rating the IRFB260N sits in the medium-high-voltage class of switching MOSFETs, typically found in telecom and industrial DC rails, boost and flyback converters, LED and backlight drivers and power-factor-correction stages. Common where the bus sits well above 100 V but below rectified mains.
The 56 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
The low 0.04 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 64 ns and an output capacitance (Coss) of 580 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the IRFB260N
A drop-in substitute for the IRFB260N must be the same N-channel type and offer a drain–source rating of at least 200 V, a continuous drain current rating of at least 56 A and an on-resistance no higher than 0.04 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO220AB footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the IRFB260N?
The IRFB260N is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 200 V drain-source and 56 A continuous drain current.
What is the maximum voltage of the IRFB260N?
The IRFB260N has a maximum drain-source voltage (Vds) of 200 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the IRFB260N handle?
It is rated for 56 A of continuous drain current, with power dissipation limited to 380 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the IRFB260N?
On-resistance (Rds(on)) is 0.04 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the IRFB260N come in?
It is listed in TO220AB. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the IRFB260N?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 200 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 56 A |
| Drain-Source On-Resistance (Rds) | 0.04 |
| Rise Time (tr) | 64 nS |
| Output Capacitance (Coss) | 580 pF |
| Junction Temperature (Tj) | 175 °C |
| Package | TO220AB |
| Power Dissipation (Pd) | 380 W |
Equivalent & Replacement Parts
No verified equivalents are listed for IRFB260N yet.