IRF9Z24N MOSFET — Specifications & Equivalents

MOSFET P -Channel - IRF9Z24N

Key Specifications

TypeMOSFET
Channel TypeP -Channel
Drain-Source Voltage (Vds)55 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)12 A
Drain-Source On-Resistance (Rds)0.175
Rise Time (tr)55 nS
Output Capacitance (Coss)170 pF
Junction Temperature (Tj)175 °C
PackageTO220AB
Power Dissipation (Pd)45 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF9Z24N yet.

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